| abstract |
A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed over the semiconductor die. In one embodiment, the capacitor is formed by depositing a first conductive layer over the semiconductor die, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the semiconductor die. In another embodiment, a capacitor is formed by forming a trench in a semiconductor die, depositing an insulating material in the trench, and depositing a conductive material in the trench. |