http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102489412-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-60 |
| filingDate | 2020-05-26^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2023-01-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2023-01-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102489412-B1 |
| titleOfInvention | Cadmium Arsenide Nanowire and Preparation Method Thereof |
| abstract | The present invention relates to a cadmium arsenide nanowire, which is a Dirac metalloid compound, and a method for preparing the same. The cadmium arsenide nanowire of the present invention is a Dirac metalloid compound and can be used in electric and electronic devices including magnetic sensors, optical sensors, superconductors, spintronics, or quantum computer devices, and has very low electrical resistance to various types of high-performance electronic devices. applicable to the material. In addition, the manufacturing method of the cadmium arsenide nanowire of the present invention can be performed at a relatively low temperature as a low-cost process. |
| priorityDate | 2020-05-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 26 of 26.