| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-076 |
| filingDate |
1998-08-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1999-03-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-19990023298-A |
| titleOfInvention |
Photovoltaic device and manufacturing method thereof |
| abstract |
The photovoltaic device of the present invention is a photovoltaic device comprising a plurality of pin junctions each formed of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer each containing a non-single crystal material containing a Group IV element as a main component , The photovoltaic device includes a first pin junction containing microcrystalline silicon carbide (hereinafter referred to as microcrystalline SiC) as a main component of the i-type semiconductor layer and a second pin junction containing microcrystalline silicon (hereinafter referred to as microcrystalline Si) as a main component of the i- ), And the first pin junction is provided closer to the light incidence side than the second pin junction. Thereby, a method of manufacturing a photovoltaic device capable of forming i-type microcrystalline silicon and microcrystalline SiC at a practical deposition rate is provided at a low cost and does not exhibit little photodegradation and has a photovoltaic device with high photoelectric conversion efficiency / RTI > |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210088076-A |
| priorityDate |
1997-08-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |