| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5ad91e349f111c6b8b27f03f94410a7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-00 |
| filingDate |
1998-06-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af485e32739fbbdffd331bfa3b412706
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bb86f3e411a4bfd903b076d504dd326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25008fe2e6b83e08d4571a4c0ced65ff |
| publicationDate |
2000-01-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20000002944-A |
| titleOfInvention |
Method and apparatus for producing microcrystal of group III metal element nitride |
| abstract |
A method and apparatus for producing fine crystals of nitrides of Group III metal elements, such as gallium nitride (GaN), indium nitride (InN), and aluminum nitride (AlN), as shown in FIG. Ammonia gas is injected into the Group III metal element melt through a gas introduction tube equipped with a rotatable rotary wing to directly chemically react the ammonia gas and the Group III metal element. The microcrystal of can be manufactured. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100853936-B1 |
| priorityDate |
1998-06-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |