http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000027025-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-10-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_649d0ffeda9d701807798d1d53cd0b9c |
| publicationDate | 2000-05-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000027025-A |
| titleOfInvention | How to Form TIN Layer on TI Layer |
| abstract | The present invention relates to a method of forming a TiN layer on the Ti layer, in order to reduce the production cost and shorten the air by forming the Ti layer and the TiN layer in one reaction chamber, the present invention provides a TiN layer on the Ti layer Method for forming a, and preparing a silicon substrate and transferring to the reaction chamber; Depositing Ti on the silicon substrate in the reaction chamber to form a Ti layer; Maintaining the inside of the reaction chamber at about 400 ° C. and flowing N 2 gas in a low voltage plasma to form a TiN layer on the surface of the Ti layer. to provide. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030001939-A |
| priorityDate | 1998-10-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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