| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1463 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate |
1998-12-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e334feb0006c9b4b5f0b639a3793aff0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98daf70a1dbb5d7b314e4c1c46f3afd1 |
| publicationDate |
2000-07-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20000041443-A |
| titleOfInvention |
CMOS image sensor with deep field stop layer |
| abstract |
An object of the present invention is to provide a CMOS image sensor that improves color separation of CMOS image sensors and improves chromaticity of a final image output by suppressing cross talk between neighboring pixels. According to an aspect of the present invention, a CMOS image sensor includes: a first conductive semiconductor substrate including a plurality of pinned photodiodes and a field oxide layer for isolating the pinned photodiodes; A first field stop layer of a first conductivity type formed on the semiconductor substrate in contact with the bottom of the field oxide film; And a second conductive type second formed in the semiconductor substrate under the first field stop layer to prevent the noise-excited electrons not trapped in the pinned photodiode from being diffused to the photodiode of another adjacent portion. It includes a field stop layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100440775-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100790229-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100790212-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100619408-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100909855-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100790286-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020020086-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100562668-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100748314-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100748324-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100841208-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100776150-B1 |
| priorityDate |
1998-12-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |