http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000076888-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2000-03-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2000-12-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000076888-A |
| titleOfInvention | Method for manufacturing semiconductor apparatus |
| abstract | Grooves or holes are formed in the insulating layer formed on the semiconductor substrate, and a first conductive layer containing the first metal element is formed on the surface of the insulating layer. In addition, by oxidizing this, an oxide layer of the first metal element is formed on the surface of the first conductive layer. On it, a second conductive layer containing a second metal element having a lower generation free energy of oxide than the first metal element is deposited. By reducing the oxide layer of the first metal element with the second metal element, an oxide layer of the second metal element is formed at the interface between the first conductive layer and the second conductive layer. Wiring is formed in the groove or hole of the insulating layer. Thereby, on the surface of the first conductive layer used as the barrier metal layer of the wiring, a thin second metal oxide layer excellent in barrier property to the wiring material and excellent in adhesion to the wiring material can be selectively formed to have a uniform thickness. have. |
| priorityDate | 1999-03-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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