http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010066329-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0262 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 1999-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcfef58e8daf68109ca47bb6a0d2a3c1 |
| publicationDate | 2001-07-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010066329-A |
| titleOfInvention | A method for fabricating a semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method for manufacturing a semiconductor device, wherein a metal wiring located at an edge when forming a metal wiring contact connected to a drain region of an NPN transistor forming an electrostatic discharge protection circuit Charge crowding in the metal wire contacts located at the edges by forming a spacer with an oxide film or a nitride film in the contact or making the size of the metal wire contacts located at the edge smaller than the size of the metal wire contacts located at the center. This prevents damage to the edge portion of the drain region in the source direction, thereby improving ESD characteristics of the semiconductor device and thereby improving characteristics and reliability of the semiconductor device. |
| priorityDate | 1999-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
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