| abstract |
A semiconductor device having a fuse that can be cut by an energy beam, the semiconductor device being disposed above a plurality of copper wiring layers made of copper wiring disposed on a semiconductor substrate on which a plurality of semiconductor elements are formed, and a plurality of copper wiring layers. The uppermost wiring including at least a high melting point metal film connected to the copper wiring of the uppermost layer, a fuse formed as part of the uppermost wiring, and a surface protective film disposed on the uppermost wiring. |