| abstract |
The present invention provides a method of patterning a substrate on which a first material of a solution is deposited on the substrate. The components of the solution of the first material are selected and dried to leave a residue of the first material on the substrate, the residue comprising a thin film in the center and ridges around the perimeter. The residue is etched to remove the thin film, leaving a ridge on the substrate. After etching, the ridges are hydrophobic and the substrate is hydrophilic. Thereafter, an aqueous solution of the second material is deposited on both sides of the ridge. After drying the aqueous solution, the ridges are removed, leaving a layer of the second material on the substrate, which layer has a narrow gap. This layer can be used as the source and drain electrodes of the organic thin film transistor. |