http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040003903-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01R24-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01R4-185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01R4-2425 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-24 |
| filingDate | 2002-07-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff43f845a4435ecf06cf9b8f7b5c9030 |
| publicationDate | 2004-01-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040003903-A |
| titleOfInvention | Method of manufacturing semiconductor device |
| abstract | The present invention discloses a method for manufacturing a semiconductor device. In the present invention, in the heat treatment process for forming the titanium silicide film, cobalt ions diffuse to the silicon substrate to break silicon lattice bonds, thereby easily supplying silicon while forming a defect in the silicon substrate, and the dopant into which the ion dopant is implanted with the titanium silicide film The present invention provides a method for manufacturing a semiconductor device capable of improving junction leakage and contact resistance characteristics by redistributing at an interface of the silicon substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9806899-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8930444-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7531459-B2 |
| priorityDate | 2002-07-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 31 of 31.