| abstract |
A Cl 2 gas plasma is generated between the substrate and the metal member inside the chamber. The metal member is etched by Cl 2 gas plasma to form a precursor. Nitrogen gas is excited in a manner separate from the chamber containing the substrate. The metal nitride is formed by the reaction between the excited nitrogen and the precursor, and is formed into a film on the substrate. After film formation of the metal nitride, the metal component of the precursor is formed into a film on the metal nitride of the substrate. In this manner, a barrier metal film having excellent embedding characteristics and a very small thickness while suppressing the diffusion of the metal and improving the adhesion with the metal is produced.n n n The surface treatment which reduces the nitrogen content of the surface layer of a barrier metal film compared with the inside of the matrix of a barrier metal film is performed. As a result, an oxide layer is formed on the surface to improve wettability, and hydroxyl groups are formed on the surface to increase hydrophilicity. Accordingly, a barrier metal film having excellent embedding characteristics and very small thickness and enhancing adhesion with the metal to be formed thereon is produced at high speed.n n n A surface treatment is performed in which the N atoms are removed from the surface TaN layer of the barrier metal film to reduce the nitrogen content of the surface layer compared to the inside of the matrix of the barrier metal film. As a result, a substantially metal layer is formed on the surface layer, and the substantially metal layer and the metal nitride layer are formed to a single layer thickness. In this manner, a barrier metal film is produced which has a very small thickness and prevents the diffusion of the metal and maintains the adhesion with the metal, thereby stabilizing the metal wiring process. |