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filingDate 2004-01-20^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2005-12-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050114218-A
titleOfInvention Method for depositing silicon
abstract The method of depositing silicon of the present invention on a substrate involves first introducing a reactive silicon containing gas and hydrogen into a plasma chamber and then initiating a plasma. After initiating the plasma, a gas mixture containing only reactive silicon containing gas or hydrogen is alternately fed to the plasma chamber in an alternating and continuous manner, and the gas mixture located inside the chamber is at least partially recovered simultaneously from the chamber. From the start, uniform microcrystalline silicon is deposited on the substrate in the presence of hydrogen.
priorityDate 2003-02-27^^<http://www.w3.org/2001/XMLSchema#date>
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