| abstract |
According to one exemplary embodiment, a BiFET located over a substrate includes an emitter layer segment located over the substrate, wherein the emitter layer segment comprises a first type of semiconductor. The HBT further comprises a first segment of an etch stop layer, wherein the first segment of the etch stop layer comprises InGaP. The BiFET further includes a FET positioned over the substrate, the FET including a source region and a drain region, wherein the second segment of the etch stop layer is located below the source region and the drain region, and the second segment of the etch stop layer is formed of InGaP. Include. The FET further includes a second type of semiconductor layer located below the second segment of the etch stop layer. The etch stop layer increases the linearity of the FET and does not reduce the flow of electron airflow in the HBT. |