http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060105538-A

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filingDate 2006-03-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f44a11946c40c0d75041932d39ac51d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cbc831b81ddc6df9c547048090298f1
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publicationDate 2006-10-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060105538-A
titleOfInvention Method for manufacturing dielectric film, method for manufacturing piezoelectric element and method for manufacturing liquid jet head, dielectric film, piezoelectric element, and liquid jet device
abstract Provided are a method of manufacturing a dielectric film that can control crystal states relatively easily and always obtain stable characteristics, and a method of manufacturing a piezoelectric element capable of improving the characteristics of a piezoelectric element.n n n A coating step of forming a dielectric precursor film by applying a colloidal solution containing an organometallic compound containing at least a metal constituting the dielectric film including lead components, a drying step of drying the dielectric precursor film, and degreasing to degrease the dielectric precursor film. And a firing step of baking the dielectric precursor film to form a dielectric film, wherein the drying step is a first drying in which the dielectric precursor film is dried by heating at a temperature lower than a boiling point of a solvent that is a main solvent of the material and maintaining it for a predetermined time. And a second drying step of drying the dielectric precursor film in a range of 140 ° C. to 170 ° C., wherein the degreasing step results in a temperature of degreasing at 350 ° C. to 450 ° C. and a temperature increase rate of 15 [° C./sec] or more. In the firing step, the temperature increase rate is 100 [° C / sec] to 150 [° C / sec].
priorityDate 2005-03-31^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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