http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060106620-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54453 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31793 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-5448 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F9-7003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2005-12-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9beb7f97b10ca2675b227cba0f3dd5b5 |
| publicationDate | 2006-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060106620-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | An object of the present invention is to improve the accuracy of detecting alignment marks in electron beam exposure.n n n The manufacturing method of a semiconductor device includes the steps of (a) forming a structure of a semiconductor device in a chip on a semiconductor wafer and simultaneously forming an alignment mark, (b) forming a layer to be processed on the semiconductor wafer, and (c) Exposing the alignment mark, (d) applying an electron beam resist film on the layer to be processed, (e) scanning the alignment mark with an electron beam to obtain position information of the alignment mark, and obtaining a difference in position information. ), (F) removing the outliers based on the difference in the positional information, and (g) performing electron beam exposure based on the positional information of the alignment mark from which the outliers are removed.n n n n Silicon nitride film, buried oxide film, interlayer insulating film, alignment mark, metal wiring layer |
| priorityDate | 2005-03-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099 |
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