| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-24 |
| filingDate |
2005-03-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45daba8c5c65e2b6f8099b569affbc52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbd8dd5a7e0ffec7405b10674ed6424c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b02e60f43ef09859c3e1cb4894c3bfd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3478f697d53ddeb4f1c8295178b3b428
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba902fb8dfc22fc051dfc8fd1921a7ef |
| publicationDate |
2007-01-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20070004881-A |
| titleOfInvention |
Method for forming oxynitride film and nitride film, forming apparatus, oxynitride film, nitride film and substrate |
| abstract |
There is no dependence on the nitriding time and nitriding temperature of the nitriding reaction, and low temperature and high-speed nitriding are possible, and a uniform nitride film and an oxynitride film are formed. It is obtained by providing a solid dielectric on at least one opposing surface of a pair of opposing electrodes under a pressure of 300 Torr or higher, and applying an electric field by introducing nitrogen gas containing 0.2% or less of oxide between the pair of opposing electrodes. N 2 (2 nd ps) or N 2 (HIR) active species plasma is contacted with the workpiece to form a nitride film / oxynitride film on the surface of the workpiece. |
| priorityDate |
2004-03-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |