Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16B37-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E04D3-3606 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
filingDate |
2006-01-06^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb4b72a1b7e729a827bf6e0e46a8bfe4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96bd32a5f5c69e4cd7ed67511c4864cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b11ee7f2810dc8bac2229925935fd794 |
publicationDate |
2007-07-12^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20070074082-A |
titleOfInvention |
Manufacturing Method of Semiconductor Device |
abstract |
The present invention relates to a method for manufacturing a semiconductor device, and by using a multi-functional hard mask layer which simultaneously serves as an anti-reflection film and a hard mask, to secure an overlap margin between the storage electrode contact hole and the storage electrode to lower the contact resistance and to etch the interlayer insulating film. In order to prevent the line width of the lower portion due to the inclination generated during the process, and to eliminate the three steps of the interlayer insulating film deposition, polysilicon layer deposition and polysilicon layer etching process to reduce the production period and cost of the product. |
priorityDate |
2006-01-06^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |