http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070089511-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2006-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ca17e6710beeb008538b4dbcce0c1e9 |
| publicationDate | 2007-08-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070089511-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing technology, and more particularly, to a semiconductor device manufacturing method for preventing bridge defects between neighboring storage node contacts in a semiconductor device using a low resistance tungsten film as a bit line during a semiconductor device manufacturing process. The change of physical properties of the BPSG film, which is the second interlayer insulating film, is caused by the reaction gas when depositing low-resistance tungsten when forming the conventional bit line, and the bridge between neighboring storage node contacts is generated due to the generated micro voids. According to an exemplary embodiment of the present invention, the second interlayer insulating layer is etched using the low-resistance tungsten, which is the bit line, and the hard mask nitride layer as an etch barrier to expose the upper portion of the word line, and spacers are formed on both sidewalls of the second interlayer insulating layer. A method of manufacturing a semiconductor device for preventing bridge defects between storage node contacts is provided. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101046714-B1 |
| priorityDate | 2006-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 19 of 19.