http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080011091-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 2007-07-26^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55b1e3b8e9900f3c2c689e49cb17ad4d
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publicationDate 2008-01-31^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20080011091-A
titleOfInvention Manufacturing Method of Semiconductor Device
abstract Provided is a method of manufacturing a semiconductor device which can reduce costs with a small number of processes. Moreover, the manufacturing method of the semiconductor device which has a semiconductor element which has a semiconductor layer of a desired shape even if a resist is not used is provided. In addition, the present invention provides a method of manufacturing a semiconductor device capable of increasing the efficiency at the time of correcting a defect in a wiring formed on a substrate and increasing the yield and mass productivity.n n n Forming a light absorbing layer on one side of the first substrate, providing a second substrate on the light absorbing layer, providing a mask so as to face the other surface of the first substrate, A method of manufacturing a semiconductor device comprising the step of transferring a portion of a layer that absorbs light to a second substrate by irradiating a laser beam through a mask.
priorityDate 2006-07-28^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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