| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2002-1437 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-14137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-14072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1628 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-01 |
| filingDate |
2007-10-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be9e48b83c9a929d74684f63b1cf8456 |
| publicationDate |
2008-04-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080033111-A |
| titleOfInvention |
Manufacturing method of ink jet print head and ink jet print head |
| abstract |
The present invention provides an ink jet print head having a flow path shape corresponding to the intended purpose, and a manufacturing method of the ink jet print head. In the method of manufacturing the ink jet print head, an SOI substrate having a first silicon layer, a second silicon layer, and a dielectric layer is prepared. A sacrificial layer is formed on the first silicon layer. An etch stop layer is formed on the sacrificial layer. An energy generating element is formed on the surface of the SOI substrate. The second silicon layer and the dielectric layer are etched to form an ink supply port. The supply port is formed by etching. The first silicon layer is etched to form a liquid flow path. A part of the etch stop layer is removed to form a discharge port. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8690295-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012036682-A1 |
| priorityDate |
2006-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |