http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090001065-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a251ae79dd7a008d95010b238c6aa1f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d3163957db744d0171ae3ff8ab14f0d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 2007-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5639634575546091157591c6a4a48e99 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fd42c05e9db0d8467dbbe324ca139ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24b02fec26d5d69f1c5eff2d4a42290c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a56abe28e316e6635d81ceb8cc4374f |
| publicationDate | 2009-01-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090001065-A |
| titleOfInvention | How to separate silicon remaining after crystal growth from crucible |
| abstract | The present invention relates to a method for separating the silicon crystals remaining in the crucible used in the silicon single crystal manufacturing process, in particular from the crucible in which the silicon remaining inside after the completion of the silicon single crystal growth by the Czochralski method CLAIMS 1. A method for isolating silicon, the method comprising: contacting liquid nitrogen to a crucible in which the silicon remains and the silicon remaining in the crucible to apply thermal stress to the crucible and the silicon; Applying a physical stress to the contact surface of the crucible and silicon; and a method for separating the silicon remaining after crystal growth from the crucible, characterized in that it comprises a. Accordingly, in the crucible where the silicon single crystal growth is completed and the silicon remains inside, the impurities remaining in the crucible can be quickly and easily separated by using the difference of the thermal expansion coefficient of the silicon and the crucible through the liquid nitrogen. Not only can high-purity silicon be used to efficiently recycle resources, but it also has the advantage of reducing labor costs and dramatically reducing process time by improving inefficient tasks during silicon single crystal growth. |
| priorityDate | 2007-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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