| abstract |
The present invention discloses a method for determining values for temperature, radiation, emissivity, transmittance and / or reflectance of an object, such as a semiconductor wafer, in a rapid heating system 1, and a radiation detector 50 for recording the radiation temperature from the object. Using the output signal from) as the measured value, the predicted values for the measured values are calculated in the model system 100. The evolution over time of the measurements is compared to the evolution over time of the predictions, and the measurements are corrected if their differences exceed a predetermined threshold. |