http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090064995-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1146d1dc4ffd66d77c25805ca3f9a74f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2007-12-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_485c05e47654ccf6a622e87f226824b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_963d7811c4def34043f2191f54cda8a3 |
| publicationDate | 2009-06-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090064995-A |
| titleOfInvention | Method for manufacturing metal wiring of semiconductor device |
| abstract | The embodiment relates to a method for producing a metal wiring of a semiconductor element. In the method of manufacturing a metal wiring of a semiconductor device according to the embodiment, forming an insulating film having a via hole on a semiconductor substrate, by adsorbing a precursor material on the insulating film on the insulating film and then argon and hydrogen flow through the insulating film PEALD forming a TaN film by plasma enhanced atomic layer deposition, forming a Ta film on the TaN film by physical vapor deposition (PVD), and forming a metal film in the TaN film and the via hole in which the Ta film is formed. Characterized in that it comprises a. The embodiment can reduce the resistance by depositing the diffusion barrier film in the semiconductor device by the PEALD method and ensure the uniformity of the film thickness. |
| priorityDate | 2007-12-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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