| abstract |
The insulating resin composition according to one embodiment of the present invention comprises (A) a silicon-based polymer compound including a primary amine group, a secondary amine group, or both; (B) an organometallic compound; And (C) a solvent. Such an insulating resin composition maintains its physicochemical properties in a semiconductor device forming process, thereby preventing a defective characteristic of a semiconductor device due to an insulating film defect, smudge, and bunching, and also reduces hysteresis The characteristics of the semiconductor device can be improved.n n n n An insulating resin composition, an amine, a silicon-based polymer, a siloxane |