http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100095392-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2010-02-19^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f3c63d574ddb101a39e7723905df010 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7033b657086bfaac559b7b1ccff5a1e7 |
| publicationDate | 2010-08-30^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100095392-A |
| titleOfInvention | Manufacturing method of multi-gradation photomask, and manufacturing method of semiconductor transistor |
| abstract | A semi-transmissive film and a light shielding film are formed in this order on the light-transmissive substrate, and a mask blank having a first resist film formed on the uppermost layer is prepared, and the light shielding film is etched using the first resist pattern as a mask to form a light shielding film pattern. Forming a transmissive portion by etching the translucent film using the first resist pattern or the light shielding film pattern as a mask; forming a second resist film covering the entire surface of the substrate obtained by removing the first resist pattern; and second resist Forming a semi-transmissive portion and a light-shielding portion by etching the light-shielding film pattern using the pattern as a mask, and the step of forming the second resist film includes Si on the surface of the transparent substrate exposed by forming the light-transmitting portion prior to formation of the second resist film. Surface treatment with a containing organic compound is performed. |
| priorityDate | 2009-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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