| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2211-5648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2211-5641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F12-0238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2211-5642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F2212-7202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-72 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 |
| filingDate |
2009-03-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6182303c563ba0eb459fbff77f9fa5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ea5bb628a2908e8f787c180c4bb0238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c261ac103f14a99146a83c570ab7d442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6ca6f8064827ac1b90489c52169019a |
| publicationDate |
2010-10-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100107609-A |
| titleOfInvention |
Resistive memory device, memory system including same and method of writing resistive memory device |
| abstract |
A program method of a resistive memory device having a plurality of multi-bit cells may first write program data to a first bit of each of the plurality of multi-level cells, and write a plurality of program data when writing to each first bit is completed. Sequentially writing to each second bit of the multi-level cells of the. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9406392-B2 |
| priorityDate |
2009-03-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |