http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100108345-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2008-11-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e7fdb16485259bce3b43ef57a1d4c7b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d07f2bdd9f01297083779336e2c14e49 |
| publicationDate | 2010-10-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100108345-A |
| titleOfInvention | Bevel plasma treatment to enhance wet edge clean |
| abstract | Various embodiments described herein provide improved mechanisms of removal of unwanted depositions on bevel edges to improve process yield. Embodiments provide apparatuses and methods for treating the bevel edge of a copper plated substrate to convert copper at the bevel edge to a copper compound that can be wet etched by the fluid with a higher etch selectivity relative to copper. In one embodiment, wet etching of the high selectivity copper compound relative to copper allows removal of nonvolatile copper at the substrate bevel edge in the wet etch processing chamber. Plasma treatment at the bevel edge allows copper to be removed at the bevel edge with precise spatial control up to about 2 mm, such as about 1 mm, such as about 0.5 mm or about 0.25 mm, to the shortest edge of the substrate. In addition, the above described apparatuses and methods for bevel edge copper removal do not have the problems of copper etching fluid splashing on device regions causing defects and thinning of copper films. Thus, device yield can be greatly improved. |
| priorityDate | 2007-11-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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