http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110006946-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
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filingDate 2009-07-15^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db8d34a44b8768fc8cc8a2c8319555fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e9806419ffb8ff1cd935601ea1b7fde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_009f7944c41bebe458bc6f86b280487e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_807f34a3d1f08e6768a0b0a6d92b6e71
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publicationDate 2011-01-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110006946-A
titleOfInvention Semiconductor chip with low noise through silicon via passing through guard ring and stacked package using same
abstract The present invention provides a semiconductor chip capable of reducing noise generated when the guard ring and the through silicon via are spaced apart, and a stacked package using the same. The semiconductor chip of the present invention includes a silicon substrate; A first conductive guard ring and a second conductive guard ring formed by ion implantation of impurities spaced apart from each other by a predetermined interval in the silicon substrate; A first through silicon via penetrating the first conductive guard ring and the silicon substrate; And a second through silicon via penetrating the second conductive guard ring and the silicon substrate. The present invention described above forms a through silicon via to penetrate the guard ring formed by ion implantation. It is possible to isolate the noise generated by, and also to protect the through silicon vias from the noise present in the silicon substrate.n n n n Package, Through Silicon Via, Guard Ring, Ion Implantation, Noise, Semiconductor Chip
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076772-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9899261-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9082781-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3048642-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786560-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103367334-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103367334-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9269664-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9355899-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9543232-B2
priorityDate 2009-07-15^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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