http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110025930-A

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filingDate 2008-06-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74679e2cffc4ecb9ace8831172eccff8
publicationDate 2011-03-14^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110025930-A
titleOfInvention Prevention or Mitigation of Growth Formation on Metal Films
abstract The present invention, in one aspect, provides an electronic package 100 comprising a substrate 105 and a metal film 110 plated on the surface 107 of the substrate. The metal film has a polycrystalline structure of grains 120 with substantially anisotropic crystal unit cell dimensions. One dimension 130 of the crystal unit cell 125 is oriented in a direction 135 substantially perpendicular to the surface of the substrate for at least about 80 percent of the grain. The metal atoms of the metal film have a lattice diffusion coefficient along the vertically oriented unit cell dimension that is slower than the lattice diffusion coefficient along the other unit cell dimensions 132 and 134.
priorityDate 2008-06-30^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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