http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110077683-A

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filingDate 2009-12-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a1b0bd0580d167cf31a8294373833ae
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publicationDate 2011-07-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110077683-A
titleOfInvention Composition for resist underlayer film and method for manufacturing semiconductor integrated circuit device using same
abstract In the present invention, there is provided a composition for a resist underlayer film comprising an organosilane-based condensation polymer containing 10 to 40 mol% of structural units represented by the following formula (1) and a solvent.n n n [Formula 1]n n n n n n n n The definition of ORG in Chemical Formula 1 is as described in the specification.n n n As a result, the present invention can provide a resist underlayer film composition capable of transferring an excellent pattern by providing a resist underlayer film having excellent storage stability and resistance to etching and a method of manufacturing a semiconductor integrated circuit device using the same.n n n n Resist underlayer, organosilane condensation polymer, storage stability, etch resistance
priorityDate 2009-12-30^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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