| abstract |
Increased GaN transistors and methods of forming the same. The increased GaN transistor includes a substrate, a transition layer, a buffer layer made of III nitride material, a barrier layer made of III nitride material, a drain contact and a source contact, a gate III-V compound containing an acceptor dopant element, and a gate. And a metal, wherein the gate III-V compound and the gate metal are formed in a single photomask process to self-align, and the lower side of the gate metal and the upper side of the gate compound have the same dimensions. In addition, the increased GaN transistor may have a field plate formed of an ohmic metal, and the drain ohmic metal, the source ohmic metal, and the field plate are formed by a single photomask process. |