| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0073 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2010-06-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9e9c42ab9ee09c726735796a17728a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f5072326e02da6a6e86995c8e898b1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_196f403b832a69af516dbeaca61902dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_337c42cb48cc33f2f57d4965c662092e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ebe59611b79918a07ceea00b4fb44ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19258928d403928c3813560112a8865c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e706484c8d118d9a491f31420160e0bd |
| publicationDate |
2011-12-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110138927-A |
| titleOfInvention |
A variable resistance element, a semiconductor device including the variable resistance element, and a method of operating the semiconductor device |
| abstract |
The present invention discloses a method of operating a semiconductor device, wherein the method of operating a semiconductor device including a variable resistance element comprises applying a reset pulse to the variable resistance element to change the variable resistance element from the first resistance state to the second resistance state. The second data is written to the semiconductor device by writing the first data to the semiconductor device, applying a set pulse to the variable resistance device to change the variable resistance device from the second resistance state to the first resistance state, and the magnitude of the reset pulse is Greater than the magnitude of the set pulse, the second resistance state is larger in resistance than the first resistance state. |
| priorityDate |
2010-06-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |