http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120024397-A

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filingDate 2011-08-03^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa08dd1ce9b0d4cda7b7aef3d0448f94
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publicationDate 2012-03-14^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120024397-A
titleOfInvention Semiconductor devices
abstract Deviation in the electrical characteristics of the transistor using the oxide semiconductor and deterioration of the electrical characteristics significantly lower the reliability of the semiconductor device. An oxide semiconductor layer formed on the substrate, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, having an end portion having a taper angle, and having an upper end portion having a curved shape, and in contact with a portion of the oxide semiconductor layer; A semiconductor device having a gate insulating layer covering a layer, a source electrode and a drain electrode, and a gate electrode on the gate insulating layer overlapping the oxide semiconductor layer, and a fabrication method thereof.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140050542-A
priorityDate 2010-08-06^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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