http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130009695-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30 |
| filingDate | 2012-07-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0add81bb44226ce3a7adcf9dd82631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbf7f2561e66e4c479ede49c7b3d56f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856 |
| publicationDate | 2013-01-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130009695-A |
| titleOfInvention | Pattern Forming Method and Resist Composition |
| abstract | The present invention is a polymer composition having a repeating unit selected from the following formulas (1) to (5), a resist composition containing an acid generator and an organic solvent, or a repeat selected from the following formulas (1) to (5): A resist composition containing a unit, a polymer compound having a repeating unit selected from the following formulas (e1) to (e3), and an organic solvent is applied onto a substrate, and the heat treatment is followed by exposing the resist film with high energy rays. The pattern formation method which melt | dissolves an unexposed part later using the developing solution by the organic solvent, and obtains the negative pattern which an exposure part does not melt | dissolve. (Wherein R 2 , R 5 , R 10 , R 15 , R 19 are single bonds or alkylene groups, R 7 , R 12 , R 16 are single bonds or methylene groups, R 6 , R 11 are alkylene groups, R 3 , R 8 , R 13 , R 17 , and R 20 are acid labile groups, m and n are integers from 1 to 4, p is 1 or 2.) The photoresist film containing the high molecular compound containing the repeating unit of the (meth) acrylate by which one of the hydroxy groups of a monosaccharide couple | bonded as a methacryl ester, and the remaining hydroxy group substituted by the acid labile group, and the photoresist film by an organic solvent In the image formation of the positive negative inversion in development, the solubility of the unexposed part is high, the solubility of the exposed part is low, and the melting contrast is high. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150046613-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190119813-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101879903-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160100240-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140117288-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140117289-A |
| priorityDate | 2011-07-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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