http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130018915-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2006-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a7b2d7790878c5fa744f79bb516e6d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b113d725ac3ed970f0de9d584852432 |
| publicationDate | 2013-02-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130018915-A |
| titleOfInvention | Apparatus and methods for removing films on the bevel edge and backside of a wafer |
| abstract | Improved mechanism for removal of etch byproducts inside the chamber and on the backside of the substrate, and etch byproducts near the substrate bevel edge, dielectric films and metal films to avoid accumulation of polymer byproducts and deposited films and to improve process yield Are provided. An exemplary plasma etch process chamber is provided that is configured to clean the bevel edge of a substrate. The chamber includes a lower edge electrode surrounding a substrate support in a plasma process chamber, the substrate support configured to receive the substrate, and the lower edge electrode and the substrate support are electrically insulated from each other by a lower dielectric ring. The chamber also includes an upper edge electrode surrounding a gas distribution plate opposite the substrate support, wherein the upper edge electrode and the gas distribution plate are electrically insulated from each other by an upper dielectric ring, the upper edge electrode and the lower edge The electrode is configured to generate a cleaning plasma to clean the bevel edge of the substrate. |
| priorityDate | 2005-09-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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