| abstract |
The present invention provides a semiconductor device having a better gate insulating film in a semiconductor device using an oxide semiconductor. In addition, there is little need to change the film configuration, process conditions, production apparatus, or the like of the mass production technology, which is currently put into practice, and impart stable electrical characteristics to the semiconductor device, thereby providing a highly reliable semiconductor device. Also provided is a method of manufacturing the semiconductor device. A gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, wherein the gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film And an oxide semiconductor film is in contact with the metal oxide film. |