http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130066978-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94ba9d649272953377f9f19f6c65861e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B35-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 |
| filingDate | 2011-12-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dda1daeb8a5534029388591780a45094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71ee5e0213d63553ed0c58e1273052f7 |
| publicationDate | 2013-06-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130066978-A |
| titleOfInvention | Single Crystal Growth Apparatus and Method |
| abstract | The present invention relates to a single crystal growth apparatus, comprising a crucible having an inner space for loading raw materials, an open top and bottom open crucibles, a lid opening and closing a top of the crucible and a seed crystal holder installed on one surface thereof, and the crucible lid Single crystal growth mounted on the lower portion, including a seed crystal holder to which the seed crystal is attached, an insertion member formed between the seed crystal holder and the seed crystal, an insulating member surrounding the crucible, and an induction heating coil for heating the crucible. Provide the device. Accordingly, by controlling the sublimation temperature of the single crystal raw material through the uniform heat distribution inside the crucible, it is possible to grow a single crystal with improved crystal quality. In addition, by controlling the sublimation temperature of the single crystal raw material, it is possible to easily control the ratio of the gas phase generated in the upper and inner space of the crucible, it is possible to grow a high quality single crystal. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150066014-A |
| priorityDate | 2011-12-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID416641266 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23956 |
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