| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2012-01-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5879c2565266ac84fa0e838ea43c14ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d1eca32ede7a78ae63fa71c9f3152d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cbc616b7e7ab7690b141123b145f815
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c5ac9086201bf38674d75ad90817282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d62258b20fd41a57af84ab22d5982115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_892e9971bd4f1f2923cd5dc8155f36b6 |
| publicationDate |
2013-07-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130078965-A |
| titleOfInvention |
Multicomponent dielectric film formation method and semiconductor device manufacturing method |
| abstract |
The present technology not only easily adjusts the composition in the thin film and improves the uniformity of the composition, but also promotes the bonding between the components, thereby realizing excellent film properties and forming a thin film having improved leakage current problem. The present invention provides a method for forming a multicomponent dielectric film and a method for manufacturing a semiconductor device. The method for forming a multicomponent dielectric film according to the present invention is a method for forming a multicomponent dielectric film using atomic layer deposition on a surface of a substrate. Injecting a complex source in which a tantalum source having a zirconium source having a cyclopentadienyl ligand is mixed and adsorbed onto the substrate; A first purge step of removing the non-adsorbed complex source; Injecting an oxidant to react with the adsorbed composite source to form an oxide containing zirconium and tantalum; And a second purge step of removing the reaction byproduct and the unreacted reactant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10577385-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018048124-A1 |
| priorityDate |
2012-01-02^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |