| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2013-11-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c633fbac8e82f01a241d2d66facd674
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_689862f67c997ad328f6acc75c1819d7 |
| publicationDate |
2013-12-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130135220-A |
| titleOfInvention |
Deposition apparatus, deposition method and storage medium |
| abstract |
The rotary table 2 is rotated to adsorb Si-containing gas on the wafer W, and then O 3 gas is supplied to the surface of the wafer W to react the Si-containing gas adsorbed on the surface of the wafer W. A film-forming step consisting of a film-forming step of forming a silicon oxide film and a film-forming step of modifying the silicon oxide film using a plasma, and then stopping supply of Si-containing gas to modify the silicon oxide film using a plasma. This is done. |
| priorityDate |
2010-03-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |