http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140013997-A

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publicationDate 2014-02-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140013997-A
titleOfInvention Gallium Nitride Layer Growth on Silicon Substrates
abstract Embodiments relate to growing an epitaxy gallium oxynitride (GaN) layer on a porous silicon (Si) substrate. Porous Si substrates have a larger surface area compared to nonporous Si substrates to dissipate and accommodate the stress caused by the material deposited on the substrate. An interfacial conditioning layer (eg, transition metal silicide layer) is formed on the porous silicon substrate to enhance the growth of the buffer layer. A buffer layer formed for the GaN layer may then be formed on the silicon substrate. A seed layer for epitaxial growth of the GaN layer is then formed on the buffer layer.
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