| abstract |
A composition for depositing a carbon-doped silicon containing film is disclosed herein, comprising: an organoaminoalkylsilane having the formula: R 5 Si (NR 3 R 4 ) x H 3-x (where x = 1, 2, 3); Organoalkoxyalkylsilanes having the formula R 6 Si (OR 7 ) x H 3-x , wherein x = 1, 2, 3; Organoaminosilanes having the formula R 8 N (SiR 9 (NR 10 R 11 ) H) 2 ; A first precursor comprising at least one compound selected from the group consisting of organoaminosilanes having the formula R 8 N (SiR 9 LH) 2 , and combinations thereof; And optionally a second precursor comprising a compound having the formula Si (NR 1 R 2 ) H 3 . Also used herein is a carbon-doped silicon-containing film using a composition selected from cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD), and plasma enhanced CCVD (PECCVD). Deposition methods are described. |