http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140068036-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 2012-08-16^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3f08af1cb575183cd6a905b5411deab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bea09df0333815402f343748a5ecb17
publicationDate 2014-06-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140068036-A
titleOfInvention Plasma etching method
abstract SUMMARY OF THE INVENTION The present invention provides a plasma etching method capable of forming tapered concave portions in a wide-gap semiconductor substrate. As a means for solving the problem, a high-speed corneal film E having a higher etching rate than the wide-gap semiconductor substrate K is formed on the surface of the wide-gap semiconductor substrate K and a mask M having an opening is formed thereon. After the wide-gap semiconductor substrate K on which the high-speed cornea E and the mask M are formed is mounted on a die and the wide-gap semiconductor substrate K is heated to 200 ° C or higher, At the same time as the gas is converted into plasma, a bias potential is applied to the die to etch the wide-gap semiconductor substrate K.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9934972-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102197611-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022220576-A1
priorityDate 2011-09-05^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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