http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140068135-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
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filingDate 2012-09-07^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cb795a2828ffab2eab10c09fea45669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_162b1ce6374219a64173a570b6f2f937
publicationDate 2014-06-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140068135-A
titleOfInvention Method for fabricating integrated circuit devices with features having reduced edge curvature
abstract A structure such as an integrated circuit device is described that includes a line of material having critical dimensions that vary within a distribution that is substantially smaller than the critical dimensions of a mask element, such as a patterned resist element, used to etch lines. Techniques for processing a line of already etched crystalline material using a mask element in a manner that straightens the etched side wall surface of the line are described. The straightened sidewall surfaces do not have sidewall surface differences introduced by photolithographic processes, or other patterning processes, which are involved in forming the mask elements and etching the lines.
priorityDate 2011-09-08^^<http://www.w3.org/2001/XMLSchema#date>
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