| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9019c0ce5cb7b82c85e121f6cac86dce |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76817
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-306 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate |
2012-10-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e397f0c66c132b127924a9b0d04fe82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea669f56f04f346fd05e7453492770fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db822bc90e6e4447b146fe4e0772008d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d94760f7f753b2f7481f333b75565cd |
| publicationDate |
2014-08-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140097196-A |
| titleOfInvention |
Solid-state electronic device |
| abstract |
A solid-state electronic device of the present invention is a solid-state electronic device which is formed by heating a precursor layer starting from a precursor solution containing bismuth (Bi) and a precursor containing niobium (Nb) as a solute in an oxygen- And an oxide layer made of bismuth (Bi) and niobium (Nb) (which may contain inevitable impurities), and the heating temperature for forming the oxide layer is 520 DEG C or more and 650 DEG C or less. |
| priorityDate |
2011-11-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |