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filingDate 2013-02-26^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d8f77c2353e2dc46d6ef291408af20a
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publicationDate 2014-09-03^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140106314-A
titleOfInvention Power semiconductor device and fabricating of the same
abstract The present invention relates to a drift layer having a first conductivity type; A body layer formed on the drift layer and having a second conductivity type; A collector layer of a second conductivity type formed at a lower portion of the drift layer; A first gate formed through the body layer and a part of the drift layer; An emitter layer formed on the body layer and having a first conductivity type formed apart from the first gate; And a second gate overlying the body layer and a portion of the upper portion of the emitter layer and formed in a planar shape on top of the first gate, wherein the first and second gates and the body layer, And a precipitation blocking layer formed between the contact layer and the drift layer.
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priorityDate 2013-02-26^^<http://www.w3.org/2001/XMLSchema#date>
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