http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140128876-A

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filingDate 2014-04-25^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-11-06^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140128876-A
titleOfInvention Method of making a resistive random access memory device
abstract A method of forming a resistive random access memory (RRAM) device is disclosed. The method includes forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), and forming a second electrode by thermal atomic layer deposition (ALD) Wherein a resistive switching layer is interposed between the first electrode and the second electrode. The step of forming the resistive switching oxide can be performed without exposing the surface of the switching oxide layer to the surface-depletion plasma treatment after depositing the metal oxide.
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