| abstract |
A process of depositing aluminum nitride is disclosed. The process comprising the steps of providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to a plasma during deposition cycles . Each deposition cycle comprising the steps of flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, removing the aluminum precursor from the batch process chamber prior to flowing the nitrogen precursor, And removing the nitrogen precursor from the chamber. The process chamber is a thermal wall processing chamber, and the deposition can occur at a deposition pressure less than 1 Torr. |