http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150013233-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 |
| filingDate | 2013-05-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-02-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150013233-A |
| titleOfInvention | Vanadium compensated, si sic single crystals of nu and pi type and the crystal growth process thereof |
| abstract | In a crystal growth apparatus and a method, a polycrystalline source material and a seed crystal are introduced into a growth periphery made up of a growth crucible disposed inside a furnace. During the course of the first gas flow comprising reactive components that react with donor and / or acceptor background impurities during sublimation growth and remove these impurities from the growth periphery while a first sublimation growth pressure is present, Through the precipitation of the material, a single crystal is sublimed and grown on the seed crystal phase. Then, while the second sublimation growth pressure is present, the single crystal is sublimed and grown on the seed crystal through precipitation of the sublimed source material on the seed crystal while the second gas containing the dopant vapor but not the reaction component flows . |
| priorityDate | 2012-05-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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