abstract |
The present invention relates to a silver alloy bonding wire and a semiconductor device using the silver alloy bonding wire. More particularly, the present invention relates to a silver alloy bonding wire containing silver (Ag) as a main component and containing 3 ppm by weight to 10000 ppm by weight of iridium (Ir) ≪ / RTI > When the bonding wire of the present invention is used, it is possible to provide a bonding wire having excellent bonding property and processability and high reliability. |